VARIABLE-DENSITY HIGH-MOBILITY 2-DIMENSIONAL ELECTRON AND HOLE GASES IN A GATED GAAS/ALXGA1-XAS HETEROSTRUCTURE

被引：97

作者：

KANE, BE ^{[1
]}

PFEIFFER, LN ^{[1
]}

WEST, KW ^{[1
]}

HARNETT, CK ^{[1
]}

机构：

[1] CORNELL UNIV,DEPT APPL PHYS,ITHACA,NY 14853

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 15期

关键词：

D O I：

10.1063/1.110563

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have fabricated undoped GaAs/AlxGa1-xAs heterojunctions in which an electric field produced by a top gate confines carriers to the interface, and where contact is made to carriers at the interface using a novel self-aligned contacting process. Densities for both electrons and holes ranging from n2D < 10(10)/cm2 to n2D > 5 x 10(11)/cm2 are obtainable with mobilities comparable to those measured in high quality modulation-doped heterojunctions.

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页码：2132 / 2134

页数：3

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