HIGH-MOBILITY VARIABLE-DENSITY TWO-DIMENSIONAL ELECTRON-GAS IN INVERTED GAAS-ALGAAS HETEROJUNCTIONS

被引：59

作者：

MEIRAV, U ^{[1
]}

HEIBLUM, M ^{[1
]}

STERN, F ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

关键词：

D O I：

10.1063/1.99176

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1268 / 1270

页数：3

共 11 条

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[8] SHTRIKMAN H, 1988, J VAC SCI TECH B APR
[9] DOPING CONSIDERATIONS FOR HETEROJUNCTIONS
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[J]. APPLIED PHYSICS LETTERS, 1983, 43 (10) : 974 - 976
[10] DAMPED OSCILLATIONS IN REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION DURING GAAS MBE
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