INTERFACE ROUGHNESS SCATTERING IN GAAS/ALAS QUANTUM-WELLS

被引：627

作者：

SAKAKI, H

NODA, T

HIRAKAWA, K

TANAKA, M

MATSUSUE, T

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 23期

关键词：

D O I：

10.1063/1.98305

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1934 / 1936

页数：3

共 10 条

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[7]

SAKAKI H, 1985, JPN J APPL PHYS, V24, P41

[8] CALCULATED TEMPERATURE-DEPENDENCE OF MOBILITY IN SILICON INVERSION-LAYERS [J].

STERN, F .

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[9] ATOMISTIC MODELS OF INTERFACE STRUCTURES OF GAAS-ALXGA1-XAS (X=0.2-1) QUANTUM-WELLS GROWN BY INTERRUPTED AND UNINTERRUPTED MBE [J].

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[10]

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