SHRINKAGE EFFECTS OF POLYIMIDE FILM UNDER ION-BEAM IRRADIATION

被引：14

作者：

XU, XL ^{[1
]}

YU, YH ^{[1
]}

LIN, ZX ^{[1
]}

CHEN, LZ ^{[1
]}

FANG, F ^{[1
]}

ZHOU, ZY ^{[1
]}

ZOU, SC ^{[1
]}

DU, GD ^{[1
]}

XIA, GQ ^{[1
]}

机构：

[1] ACAD SINICA,SHANGHAI INST MET,HIGH SPEED DEVICES LAB,SHANGHAI 200050,PEOPLES R CHINA

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1991年 / 59卷 / pt 2期

关键词：

D O I：

10.1016/0168-583X(91)95808-Q

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Ion beam induced electrical conduction of ion implanted polyimide film could find potential applications for encapsulation of microelectronic devices and gate-transistor fabrication. One of the important problems to be solved is the shrinkage effect of polyimide film under ion beam irradiation. In this work the shrinkage effects of B+-implanted polyimide film under different implantation conditions were investigated by using different techniques (IR reflection interference spectra, surface profile measuring system, and automatic spreading resistance measurements). According to the previous results of ASR measurement a multilayer model of the implanted polyimide film was proposed for the computer simulation of infrared reflection interference spectra. The shrinkage and depth profile of the refraction index of the implanted polyimide films will be discussed.

引用

页码：1267 / 1270

页数：4

共 5 条

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