RANGE AND RANGE STRAGGLING OF OXYGEN IMPLANTED INTO SILICON AT ENERGIES BETWEEN 2 AND 20 MEV

[1] ENERGY LOSS OF OXYGEN AND SULPHUR IONS IN MATTER [J]. NUCLEAR INSTRUMENTS & METHODS, 1968, 58 (01): : 29 - &

[2] PLURAL AND MULTIPLE-SCATTERING OF HEAVY-IONS IN SOLIDS BY MONTE-CARLO METHODS [J]. NUCLEAR INSTRUMENTS & METHODS, 1975, 125 (02): : 277 - 283

[3] FORSTER JS, 1976, NUCL INSTRUM METHODS, V136, P349, DOI 10.1016/0029-554X(76)90218-4

[4] ESTIMATION OF IMPURITY PROFILES IN ION-IMPLANTED AMORPHOUS TARGETS USING JOINED HALF-GAUSSIAN DISTRIBUTIONS [J]. APPLIED PHYSICS LETTERS, 1973, 22 (11) : 568 - 569

[5] MEASUREMENTS OF K,L AND M SHELL X-RAY PRODUCTION EFFICIENCIES [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1968, 1 (04) : 425 - &

[6] RANGE AND RANGE STRAGGLING OF HEAVY-IONS IN SOLIDS [J]. NUCLEAR INSTRUMENTS & METHODS, 1977, 146 (02): : 413 - 417

[7] HEIDEMANN KF, 1979, DEFECTS RAD EFFECTS, P492

[8] HENKE BL, 1970, ADVANCES XRAY ANALYS, V13, P639

[9] CONCENTRATION PROFILES OF BORON IMPLANTATIONS IN AMORPHOUS AND POLYCRYSTALLINE SILICON [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1975, 24 (04): : 223 - 231

[10] DETERMINATION OF MOMENTS OF EXPERIMENTAL RANGE DISTRIBUTIONS OF BORON IMPLANTED IN SILICON [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1975, 25 (03): : 205 - 206

[1] ENERGY LOSS OF OXYGEN AND SULPHUR IONS IN MATTER [J]. NUCLEAR INSTRUMENTS & METHODS, 1968, 58 (01): : 29 - &

[2] PLURAL AND MULTIPLE-SCATTERING OF HEAVY-IONS IN SOLIDS BY MONTE-CARLO METHODS [J]. NUCLEAR INSTRUMENTS & METHODS, 1975, 125 (02): : 277 - 283

[3] FORSTER JS, 1976, NUCL INSTRUM METHODS, V136, P349, DOI 10.1016/0029-554X(76)90218-4

[4] ESTIMATION OF IMPURITY PROFILES IN ION-IMPLANTED AMORPHOUS TARGETS USING JOINED HALF-GAUSSIAN DISTRIBUTIONS [J]. APPLIED PHYSICS LETTERS, 1973, 22 (11) : 568 - 569

[5] MEASUREMENTS OF K,L AND M SHELL X-RAY PRODUCTION EFFICIENCIES [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1968, 1 (04) : 425 - &

[6] RANGE AND RANGE STRAGGLING OF HEAVY-IONS IN SOLIDS [J]. NUCLEAR INSTRUMENTS & METHODS, 1977, 146 (02): : 413 - 417

[7] HEIDEMANN KF, 1979, DEFECTS RAD EFFECTS, P492

[8] HENKE BL, 1970, ADVANCES XRAY ANALYS, V13, P639

[9] CONCENTRATION PROFILES OF BORON IMPLANTATIONS IN AMORPHOUS AND POLYCRYSTALLINE SILICON [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1975, 24 (04): : 223 - 231

[10] DETERMINATION OF MOMENTS OF EXPERIMENTAL RANGE DISTRIBUTIONS OF BORON IMPLANTED IN SILICON [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1975, 25 (03): : 205 - 206