THEORY OF DEFECT STATES IN GLASSY SELENIUM

被引:73
作者
VANDERBILT, D
JOANNOPOULOS, JD
机构
来源
PHYSICAL REVIEW B | 1980年 / 22卷 / 06期
关键词
D O I
10.1103/PhysRevB.22.2927
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:2927 / 2939
页数:13
相关论文
共 33 条
[1]  
Abkowitz M. A., 1979, Physics of Selenium and Tellurium, P210
[2]  
AGARWAL SC, 1973, PHYS REV B, V7, P685
[3]   MODEL FOR ELECTRONIC-STRUCTURE OF AMORPHOUS-SEMICONDUCTORS [J].
ANDERSON, PW .
PHYSICAL REVIEW LETTERS, 1975, 34 (15) :953-955
[4]  
ANDERSON PW, 1976, J PHYSICS PARIS S, V10, pC4
[5]  
Bishop S. G., 1979, Physics of Selenium and Tellurium, P193
[6]   OPTICALLY INDUCED METASTABLE PARAMAGNETIC STATES IN AMORPHOUS-SEMICONDUCTORS [J].
BISHOP, SG ;
STROM, U ;
TAYLOR, PC .
PHYSICAL REVIEW B, 1977, 15 (04) :2278-2294
[7]   ENERGY-MINIMIZATION APPROACH TO ATOMIC GEOMETRY OF SEMICONDUCTOR SURFACES [J].
CHADI, DJ .
PHYSICAL REVIEW LETTERS, 1978, 41 (15) :1062-1065
[8]   SPECIAL POINTS IN BRILLOUIN ZONE [J].
CHADI, DJ ;
COHEN, ML .
PHYSICAL REVIEW B, 1973, 8 (12) :5747-5753
[9]  
EMIN D, 1980, 8TH P INT C LIQ AM S, P969
[10]  
FRITZSCHE H, 1973, AMORPHOUS LIQUID SEM, P221