THEORY OF DEFECT STATES IN GLASSY SELENIUM

被引：73

作者：

VANDERBILT, D

JOANNOPOULOS, JD

机构：

来源：

PHYSICAL REVIEW B | 1980年 / 22卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.22.2927

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2927 / 2939

页数：13

共 33 条

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[20] TEMPERATURE-DEPENDENT ELECTROABSORPTION ON INDIRECT EDGE OF TRIGONAL SELENIUM [J].

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