DEFECT CHEMISTRY AND STATES IN THE GAP OF LONE-PAIR SEMICONDUCTORS

被引:61
作者
KASTNER, M
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D O I
10.1016/0022-3093(78)90106-0
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
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页码:223 / 240
页数:18
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共 43 条
  • [1] ABKOWITZ M, 1977, PHYS REV LETT, V38, P1190
  • [2] ELECTRONIC-STRUCTURE OF AMORPHOUS-SEMICONDUCTORS
    ADLER, D
    YOFFA, EJ
    [J]. PHYSICAL REVIEW LETTERS, 1976, 36 (20) : 1197 - 1200
  • [3] AGARWAL SC, 1973, PHYS REV B, V7, P685
  • [4] MODEL FOR ELECTRONIC-STRUCTURE OF AMORPHOUS-SEMICONDUCTORS
    ANDERSON, PW
    [J]. PHYSICAL REVIEW LETTERS, 1975, 34 (15) : 953 - 955
  • [5] ANDRIESH AM, 1965, FIZ TVERD TELA+, V6, P2652
  • [6] OPTICALLY INDUCED LOCALIZED PARAMAGNETIC STATES IN AMORPHOUS-SEMICONDUCTORS
    BISHOP, SG
    STROM, U
    TAYLOR, PC
    [J]. PHYSICAL REVIEW LETTERS, 1976, 36 (10) : 543 - 547
  • [7] BISHOP SG, 1976, 31 AM I PHYS C P, P22
  • [8] LOCAL ORDER IN LIQUID TELLURIUM
    CABANE, B
    FRIEDEL, J
    [J]. JOURNAL DE PHYSIQUE, 1971, 32 (01): : 73 - &
  • [9] RADIATIVE RECOMBINATION IN AMORPHOUS AS2SE3
    CERNOGOR.J
    MOLLOT, F
    BENOITAL.C
    [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1973, 15 (02): : 401 - 407
  • [10] SIMPLE BAND MODEL FOR AMORPHOUS SEMICONDUCTING ALLOYS
    COHEN, MH
    FRITZSCHE, H
    OVSHINSKY, SR
    [J]. PHYSICAL REVIEW LETTERS, 1969, 22 (20) : 1065 - +