ELECTRON-BEAM-CONTROLLED TRANSMISSION OF 10-MUM RADIATION IN SEMICONDUCTORS

被引：15

作者：

CORKUM, PB

ALCOCK, AJ

LEOPOLD, KE

机构：

[1] National Research Council of Canada, Division of Physics, Ottawa

来源：

JOURNAL OF APPLIED PHYSICS | 1979年 / 50卷 / 05期

关键词：

D O I：

10.1063/1.326386

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An electron beam has been used to control the transmission of 10.6-μm radiation in Ge, ZnSe, and CdTe samples. With an ∼2.5-A/cm2 20-ns pulse of ∼110-keV electrons incident on the semiconductor, the transmission falls abruptly, recovering in approximately the recombination time of the semiconductor. Carrier-absorption cross sections at 10.6 μm have been determined for CdTe and ZnSe. Semiconductor transmission switching provides a broad-bandwidth active isolator which may find applications in high-gain CO 2 laser systems.

引用

页码：3079 / 3082

页数：4

共 23 条

[1] SELECTION OF SINGLE, MODE-LOCKED CO2-LASER PULSES BY SEMICONDUCTOR REFLECTION SWITCHING [J].