TEMPERATURE-DEPENDENCE OF POLARIZATION CHARACTERISTICS IN BURIED FACET SEMICONDUCTOR-LASER AMPLIFIERS

被引：9

作者：

LIN, MS

PICCIRILLI, AB

TWU, YY

DUTTA, NK

机构：

[1] AT&T Bell Laboratories, Murray Hill

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1990年 / 26卷 / 10期

关键词：

D O I：

10.1109/3.60901

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We measure the temperature dependence of gain and amplified spontaneous power for both TE and TM modes in semiconductor laser amplifiers. Experiments are performed on three selected amplifier types, with higher TE, higher TM, and equal TE-TM gains, respectively. The gain differences are significantly reduced at higher temperature for the TE-dominant and TM-dominant amplifiers. For amplifiers with equal TE-TM gains, the TE and TM gains remain equal at high temperature. The measurements of the amplified spontaneous power show similar characteristics. More importantly, less polarization-sensitive gain characteristics can be obtained with some decrease in maximum gain by raising the operating temperature. We explain the experimental results by using the gain equations of the semiconductor laser amplifier.

引用

页码：1772 / 1778

页数：7

共 14 条

[1]

AGRAWAL GP, 1986, LONG WAVELENGTH SEMI, pCH3

[2] POLARIZATION-INSENSITIVE, NEAR-TRAVELING-WAVE SEMICONDUCTOR-LASER AMPLIFIERS AT 1.5-MU-M [J].