TUNNELING ANOMALY IN DISORDERED METAL SILICIDE-SILICON JUNCTIONS

被引：1

作者：

CABANSKI, W

SCHULZ, M

机构：

[1] Institute for Applied Physics, University of Erlangen, Erlangen, D-8520

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1990年 / 50卷 / 06期

关键词：

71.45-d; 73.30+y; 73.40; Gh;

D O I：

10.1007/BF00323445

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Tunneling measurements on Ti-, Cr-, and Al-Schottky diodes are performed after transient annealing to form an interfacial silicide. A large zero-bias resistance anomaly is observed for Ti and Cr with a square-root law in the temperature dependence. The observation is interpreted in terms of electron-electron correlation in a disordered metal layer at the silicide-silicon interface. For aluminum which does not form a silicide, the tunneling anomaly is not observed. © 1990 Springer-Verlag.

引用

页码：541 / 544

页数：4

共 19 条

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