DEPENDENCE OF HOLE TRANSPORT ON GA DOPING IN SI MOLECULAR-BEAM EPITAXY LAYERS

被引：22

作者：

CASEL, A

JORKE, H

KASPER, E

KIBBEL, H

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 14期

关键词：

D O I：

10.1063/1.96659

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：922 / 924

页数：3

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共 14 条

[1] ELECTRON AND HOLE MOBILITIES IN SILICON AS A FUNCTION OF CONCENTRATION AND TEMPERATURE
ARORA, ND
HAUSER, JR
ROULSTON, DJ
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (02) : 292 - 295
[2] ANALYSIS OF LATTICE AND IONIZED IMPURITY SCATTERING IN P-TYPE GERMANIUM
BROWN, DM
BRAY, R
[J]. PHYSICAL REVIEW, 1962, 127 (05): : 1593 - &
[3] IMPURITY CONDUCTION IN TRANSMUTATION-DOPED P-TYPE GERMANIUM
FRITZSCHE, H
CUEVAS, M
[J]. PHYSICAL REVIEW, 1960, 119 (04): : 1238 - 1245
[4] ELECTRICAL PROPERTIES OF GERMANIUM SEMICONDUCTORS AT LOW TEMPERATURES
FRITZSCHE, H
[J]. PHYSICAL REVIEW, 1955, 99 (02): : 406 - 419
[5] THEORY OF RESISTIVITY AND HALL EFFECT AT VERY LOW TEMPERATURES
HUNG, CS
[J]. PHYSICAL REVIEW, 1950, 79 (04): : 727 - 728
[6] SHARP PROFILES WITH HIGH AND LOW DOPING LEVELS IN SILICON GROWN BY MOLECULAR-BEAM EPITAXY
IYER, SS
METZGER, RA
ALLEN, FG
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (09) : 5608 - 5613
[7] KERN W, 1970, RCA REV, V31, P187
[8] KONIG U, 1982, 2ND INT S MBE REL CL, P193
[9] ENHANCED STICKING COEFFICIENTS AND IMPROVED PROFILE CONTROL USING BORON AND ANTIMONY AS COEVAPORATED DOPANTS IN SI-MBE
KUBIAK, PAA
LEONG, WY
PARKER, EHC
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 592 - 595
[10] DOPANT DENSITY AND TEMPERATURE-DEPENDENCE OF HOLE MOBILITY AND RESISTIVITY IN BORON DOPED SILICON
LI, SS
[J]. SOLID-STATE ELECTRONICS, 1978, 21 (09) : 1109 - 1117