DEPENDENCE OF HOLE TRANSPORT ON GA DOPING IN SI MOLECULAR-BEAM EPITAXY LAYERS

[11] MODELING OF CARRIER MOBILITY AGAINST CARRIER CONCENTRATION IN ARSENIC-DOPED, PHOSPHORUS-DOPED, AND BORON-DOPED SILICON [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (07) : 764 - 769

[12] Mertens R. P., 1981, ADV ELECTRONICS ELEC, V55, P77

[13] STEIT D, 1984, APPL PHYS LETT, V44, P234

[14] CHARACTERIZATION OF GA-DOPED SOLID-PHASE - MBE SILICON [J]. JOURNAL OF CRYSTAL GROWTH, 1985, 73 (03) : 482 - 486

[11] MODELING OF CARRIER MOBILITY AGAINST CARRIER CONCENTRATION IN ARSENIC-DOPED, PHOSPHORUS-DOPED, AND BORON-DOPED SILICON [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (07) : 764 - 769

[12] Mertens R. P., 1981, ADV ELECTRONICS ELEC, V55, P77

[13] STEIT D, 1984, APPL PHYS LETT, V44, P234

[14] CHARACTERIZATION OF GA-DOPED SOLID-PHASE - MBE SILICON [J]. JOURNAL OF CRYSTAL GROWTH, 1985, 73 (03) : 482 - 486