CHARACTERIZATION OF GA-DOPED SOLID-PHASE - MBE SILICON

[1] Board K., 1982, Microelectronics Journal, V13, P19, DOI 10.1016/S0026-2692(82)80004-9

[2] CABER J, 1982, JAPAN J APPL PHYS, V21, P712

[3] Chu W. K., 1978, BACKSCATTERING SPECT

[4] DEANALEY G, 1973, ION IMPLANTATION, P143

[5] HONIG RE, 1962, RCA REV, V23, P567

[6] KASPER E, 1982, APPL PHYS A-MATER, V28, P129, DOI 10.1007/BF00617144

[7] SOLID-PHASE EPITAXIAL-GROWTH ANISOTROPY OF VACUUM-DEPOSITED AMORPHOUS-SILICON [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 82 (02): : 345 - 353

[8] P-TYPE DOPING IN SI MOLECULAR-BEAM EPITAXY BY COEVAPORATION OF BORON [J]. APPLIED PHYSICS LETTERS, 1984, 44 (09) : 878 - 880

[9] MAYER JW, 1970, ION IMPLANTATION SEM, P257

[10] DOPING OF SILICON IN MOLECULAR-BEAM EPITAXY SYSTEMS BY SOLID-PHASE EPITAXY [J]. APPLIED PHYSICS LETTERS, 1984, 44 (02) : 234 - 236

[1] Board K., 1982, Microelectronics Journal, V13, P19, DOI 10.1016/S0026-2692(82)80004-9

[2] CABER J, 1982, JAPAN J APPL PHYS, V21, P712

[3] Chu W. K., 1978, BACKSCATTERING SPECT

[4] DEANALEY G, 1973, ION IMPLANTATION, P143

[5] HONIG RE, 1962, RCA REV, V23, P567

[6] KASPER E, 1982, APPL PHYS A-MATER, V28, P129, DOI 10.1007/BF00617144

[7] SOLID-PHASE EPITAXIAL-GROWTH ANISOTROPY OF VACUUM-DEPOSITED AMORPHOUS-SILICON [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 82 (02): : 345 - 353

[8] P-TYPE DOPING IN SI MOLECULAR-BEAM EPITAXY BY COEVAPORATION OF BORON [J]. APPLIED PHYSICS LETTERS, 1984, 44 (09) : 878 - 880

[9] MAYER JW, 1970, ION IMPLANTATION SEM, P257

[10] DOPING OF SILICON IN MOLECULAR-BEAM EPITAXY SYSTEMS BY SOLID-PHASE EPITAXY [J]. APPLIED PHYSICS LETTERS, 1984, 44 (02) : 234 - 236