DOPING OF SILICON IN MOLECULAR-BEAM EPITAXY SYSTEMS BY SOLID-PHASE EPITAXY

被引：47

作者：

STREIT, D

METZGER, RA

ALLEN, FG

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 44卷 / 02期

关键词：

D O I：

10.1063/1.94682

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：234 / 236

页数：3

共 23 条

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[5]

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[7] LASER PROCESSING OF SILICON [J].

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[8]

CABER J, 1982, JPN J APPL PHYS, V21, pL721

[9] SOLID-PHASE EPITAXIAL REGROWTH OF AMORPHOUS-SILICON ON MOLECULAR-BEAM EPITAXIAL SILICON SI LAYERS [J].

CHRISTOU, A ;

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DAVEY, JE .

APPLIED PHYSICS LETTERS, 1983, 42 (12) :1021-1023

[10] SUBSTRATE-ORIENTATION DEPENDENCE OF EPITAXIAL REGROWTH RATE FROM SI-IMPLANTED AMORPHOUS SIA [J].

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SIGMON, TW .

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