LASER PROCESSING OF SILICON

被引：17

作者：

BOYD, IW

WILSON, JIB

机构：

来源：

NATURE | 1983年 / 303卷 / 5917期

关键词：

D O I：

10.1038/303481a0

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

引用

页码：481 / 486

页数：6

共 162 条

[1]

ANDERSON CL, 1980, LASER ELECTRON BEAM

[2] LOW-TEMPERATURE GROWTH OF POLYCRYSTALLINE SI AND GE FILMS BY ULTRAVIOLET-LASER PHOTO-DISSOCIATION OF SILANE AND GERMANE [J].

ANDREATTA, RW ;

ABELE, CC ;

OSMUNDSEN, JF ;

EDEN, JG ;

LUBBEN, D ;

GREENE, JE .

APPLIED PHYSICS LETTERS, 1982, 40 (02) :183-185

[3]

APPLETON BR, 1982, LASER ELECTRON BEAM

[4] CW ARGON-LASER ANNEALING OF ION-IMPLANTED SILICON [J].

AUSTON, DH ;

GOLOVCHENKO, JA ;

SMITH, PR ;

SURKO, CM ;

VENKATESAN, TNC .

APPLIED PHYSICS LETTERS, 1978, 33 (06) :539-541

[5] DYNAMICS OF Q-SWITCHED LASER ANNEALING [J].

AUSTON, DH ;

GOLOVCHENKO, JA ;

SIMONS, AL ;

SURKO, CM ;

VENKATESAN, TNC .

APPLIED PHYSICS LETTERS, 1979, 34 (11) :777-779

[6] EXPLOSIVE CRYSTALLIZATION OF A-SI FILMS IN BOTH THE SOLID AND LIQUID-PHASES [J].

AUVERT, G ;

BENSAHEL, D ;

PERIO, A ;

NGUYEN, VT ;

ROZGONYI, GA .

APPLIED PHYSICS LETTERS, 1981, 39 (09) :724-726

[7] MELTING MODEL FOR PULSING-LASER ANNEALING OF IMPLANTED SEMICONDUCTORS [J].

BAERI, P ;

CAMPISANO, SU ;

FOTI, G ;

RIMINI, E .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) :788-797

[8] PHASE-TRANSITIONS IN AMORPHOUS SI PRODUCED BY RAPID HEATING [J].

BAERI, P ;

FOTI, G ;

POATE, JM ;

CULLIS, AG .

PHYSICAL REVIEW LETTERS, 1980, 45 (25) :2036-2039

[9]

BAGLEY BG, 1979, P MATER RES SOC S LA, P97

[10] LASER-INDUCED CHEMICAL VAPOR-DEPOSITION OF POLYCRYSTALLINE SI FROM SICL4 [J].

BARANAUSKAS, V ;

MAMMANA, CIZ ;

KLINGER, RE ;

GREENE, JE .

APPLIED PHYSICS LETTERS, 1980, 36 (11) :930-932

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