SOLID-PHASE EPITAXIAL-GROWTH ANISOTROPY OF VACUUM-DEPOSITED AMORPHOUS-SILICON

被引：12

作者：

KAVERINA, IG

KOROBTSOV, VV

ZAVODINSKII, VG

ZOTOV, AV

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1984年 / 82卷 / 02期

关键词：

D O I：

10.1002/pssa.2210820202

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

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页码：345 / 353

页数：9

相关论文

共 29 条

[1] EVIDENCE FOR VOID INTERCONNECTION IN EVAPORATED AMORPHOUS-SILICON FROM EPITAXIAL CRYSTALLIZATION MEASUREMENTS
BEAN, JC
POATE, JM
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (01) : 59 - 61
[2] NATURE OF VICINAL LASER-ANNEALED SI(111) SURFACES
CHABAL, YJ
ROWE, JE
CHRISTMAN, SB
[J]. PHYSICAL REVIEW B, 1981, 24 (06): : 3303 - 3309
[3] SUBSTRATE-ORIENTATION DEPENDENCE OF EPITAXIAL REGROWTH RATE FROM SI-IMPLANTED AMORPHOUS SIA
CSEPREGI, L
KENNEDY, EF
MAYER, JW
SIGMON, TW
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 3906 - 3911
[4] REGROWTH KINETICS OF AMORPHOUS-GE LAYERS CREATED BY GE-74 AND SI-28 IMPLANTATION OF GE CRYSTALS
CSEPREGI, L
KULLEN, RP
MAYER, JW
SIGMON, TW
[J]. SOLID STATE COMMUNICATIONS, 1977, 21 (11) : 1019 - 1021
[5] SOME OBSERVATIONS ON THE AMORPHOUS TO CRYSTALLINE TRANSFORMATION IN SILICON
DROSD, R
WASHBURN, J
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) : 397 - 403
[6] DROSD R, 1980, J APPL PHYS, V51, P4016
[7] STRUCTURE AND TRANSFORMATION CHARACTERISTICS OF IMPURITY STABILIZED PHASES ON SI(111) SURFACE
FLORIO, JV
ROBERTSON, WD
[J]. SURFACE SCIENCE, 1971, 24 (01) : 173 - +
[8] SEMICONDUCTOR SURFACES
HANEMAN, D
[J]. ADVANCES IN PHYSICS, 1982, 31 (03) : 165 - 194
[9] Henzler M., 1979, FESTKORPERPROBLEME, V19, P193
[10] HESS LD, 1980, LASER ELECTRON BEAM, P562