ENHANCED STICKING COEFFICIENTS AND IMPROVED PROFILE CONTROL USING BORON AND ANTIMONY AS COEVAPORATED DOPANTS IN SI-MBE

被引：31

作者：

KUBIAK, PAA

LEONG, WY

PARKER, EHC

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 02期

关键词：

D O I：

10.1116/1.583142

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：592 / 595

页数：4

共 21 条

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[8] SHARP PROFILES WITH HIGH AND LOW DOPING LEVELS IN SILICON GROWN BY MOLECULAR-BEAM EPITAXY [J].

IYER, SS ;

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ALLEN, FG .

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[9] SI-MBE - GROWTH AND SB DOPING [J].

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