LONGITUDINAL SPATIAL INSTABILITY IN SYMMETRICAL SEMICONDUCTOR-LASERS DUE TO SPATIAL HOLE BURNING

被引:48
作者
SCHATZ, R [1 ]
机构
[1] ROYAL INST TECHNOL,DEPT MICROWAVE ENGN,S-10044 STOCKHOLM 70,SWEDEN
关键词
D O I
10.1109/3.135296
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A new type of longitudinal instability due to spatial hole burning in symmetric semiconductor laser structures (DFB lasers in particular) is examined analytically and numerically. It is shown that, at a certain output power, the gain and refractive index spatial distributions of the lasing mode become unstable. Above this output power, the modal gains and oscillation frequencies change drastically, which often causes multimode operation. A measure of the cavity stability-psi is introduced and derived analytically for a Fabry-Perot and a single phase-shifted DFB laser. Results from numerical simulations of a multiple phase-shifted DFB laser are also presented.
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页码:1443 / 1449
页数:7
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