PHOTOELECTRIC PROPERTIES OF LEAD CHALCOGENIDES

被引：29

作者：

CARDONA, M ^{[1
]}

LANGER, DW ^{[1
]}

SHEVCHIK, NJ ^{[1
]}

TEJEDA, J ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,STUTTGART,WEST GERMANY

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1973年 / 58卷 / 01期

关键词：

D O I：

10.1002/pssb.2220580113

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：127 / 137

页数：11

共 19 条

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[2] BERGLUND CN, 1964, PHYS REV A-GEN PHYS, V136, P1030
[3] OPTICAL PROPERTIES OF SOME COMPOUND SEMICONDUCTORS IN 36-150-EV REGION
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HAFNSEL, R
[J]. PHYSICAL REVIEW B, 1970, 1 (06): : 2605 - &
[4] PHOTOEMISSION OF GAAS AND INSB CORE LEVELS
CARDONA, M
PENCHINA, CM
SHEVCHIK, NJ
TEJEDA, J
[J]. SOLID STATE COMMUNICATIONS, 1972, 11 (12) : 1655 - 1658
[5] OPTICAL AND PHOTOELECTRIC PROPERTIES OF LEAD CHALCOGENIDES
CARDONA, M
YU, PY
KOCH, EE
PENCHINA, CM
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1972, 53 (01): : 327 - &
[6] CARDONA M, 1964, PHYS REV A, V131, P1658
[7] CONKLIN JB, 1966, PHYS REV, V137, P478
[8] EASTMAN DE, 1972, TECHNIQUES METALS RE, V6
[9] FEELEY FR, TO BE PUBLISHED
[10] CORE LEVELS OF III-V SEMICONDUCTORS
GUDAT, W
YU, PY
CARDONA, M
PENCHINA, CM
KOCH, EE
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1972, 52 (02): : 505 - &