PHOTOCONDUCTION IN TE AND TE-OXIDE BILAYERED FILM SENSITIVE TO UV-LIGHT

被引：6

作者：

SUNADA, J ^{[1
]}

OSADA, K ^{[1
]}

NAMEKAWA, T ^{[1
]}

OISHI, K ^{[1
]}

FUKUCHI, K ^{[1
]}

机构：

[1] TEIKYO UNIV TECHNOL,FAC INFORMAT,ICHIHARA 29001,JAPAN

来源：

PHYSICS LETTERS A | 1990年 / 146卷 / 1-2期

关键词：

D O I：

10.1016/0375-9601(90)90035-M

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The mechanism of photoconduction in Te and Te-oxide bilayered structures sensitive to UV light (photon energy higher than 2.5 eV) was investigated by measurements of conductance, photo-Hall coefficient and high frequency capacitance. Photoconduction is attributed to an increment in hole density resulting from the energy band-rising within the semiconductor surface due to UV illumination. © 1990.

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页码：85 / 88

页数：4

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