HIGH-TEMPERATURE SCHOTTKY DIODES WITH BORON-DOPED HOMOEPITAXIAL DIAMOND BASE

被引：27

作者：

GILDENBLAT, GS

GROT, SA

HATFIELD, CW

WRONSKI, CR

BADZIAN, AR

BADZIAN, T

MESSIER, R

机构：

[1] PENN STATE UNIV,DEPT ELECT ENGN,MAT RES LAB,UNIVERSITY PK,PA 16802

[2] PENN STATE UNIV,DEPT ENGN SCI & MECH,UNIVERSITY PK,PA 16802

来源：

MATERIALS RESEARCH BULLETIN | 1990年 / 25卷 / 01期

关键词：

D O I：

10.1016/0025-5408(90)90172-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report the first high temperature operation of thin film diamond based semiconductor devices. Boron-doped homoepitaxial diamond films were grown by microwave plasma assisted chemical vapor deposition using insulating natural diamond substrates. The diamond nature of the films was confirmed by several analytical techniques. Excellent rectifying characteristics were obtained for Au-gate Schottky diodes with homoepitaxial diamond base in the 26-583°C temperature range. Surface cleaning of the films was found to be a key step of the fabrication process. © 1990.

引用

页码：129 / 134

页数：6

共 6 条

[1] CRYSTALLIZATION OF DIAMOND CRYSTALS AND FILMS BY MICROWAVE ASSISTED CVD .2.
BADZIAN, AR
BADZIAN, T
ROY, R
MESSIER, R
SPEAR, KE
[J]. MATERIALS RESEARCH BULLETIN, 1988, 23 (04) : 531 - 548
[2] Derjaguin BV., 1977, GROWTH DIAMOND GRAPH
[3] HIGH-TEMPERATURE POINT-CONTACT TRANSISTORS AND SCHOTTKY DIODES FORMED ON SYNTHETIC BORON-DOPED DIAMOND
GEIS, MW
RATHMAN, DD
EHRLICH, DJ
MURPHY, RA
LINDLEY, WT
[J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (08) : 341 - 343
[4] Gildenblat G. S., 1988, International Electron Devices Meeting. Technical Digest (IEEE Cat. No.88CH2528-8), P626, DOI 10.1109/IEDM.1988.32892
[5] ELECTRICAL CHARACTERISTICS OF SCHOTTKY DIODES FABRICATED USING PLASMA ASSISTED CHEMICAL VAPOR-DEPOSITED DIAMOND FILMS
GILDENBLAT, GS
GROT, SA
WRONSKI, CR
BADZIAN, AR
BADZIAN, T
MESSIER, R
[J]. APPLIED PHYSICS LETTERS, 1988, 53 (07) : 586 - 588
[6] BIPOLAR-TRANSISTOR ACTION IN ION-IMPLANTED DIAMOND
PRINS, JF
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (10) : 950 - 952

← 1 →