ANOMALOUS BANDBENDING IN METAL INP INTERFACE FORMATION

被引：3

作者：

MCGOVERN, IT

STEPHENS, C

FIVES, K

WHITTLE, R

CIMINO, R

ZAHN, DRT

BRAUN, W

机构：

[1] MAX PLANCK GESELL,FRITZ HABER INST,W-1000 BERLIN 33,GERMANY

[2] TECH UNIV BERLIN,INST FESTKORPERPHYS,W-1000 BERLIN 12,GERMANY

[3] BESSY GMBH,W-1000 BERLIN 33,GERMANY

来源：

SURFACE SCIENCE | 1991年 / 251卷

关键词：

SURFACE PHOTOVOLTAGE; PHOTOEMISSION; INP(110);

D O I：

10.1016/0039-6028(91)91032-S

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Soft X-ray photoelectron spectroscopy (SXPS) is the favourite means of probing Schottky barrier formation at metal-semiconductor interfaces. Recent measurements on the silver/gallium-phosphide interface have demonstrated that bandbending measurements in SXPS can be distorted by a "surface photovoltage" effect (SPV). We report similar effects at metal/indium-phosphide interfaces. Correcting for the effect (which is only possible when the adlayer can provide a metallic Fermi edge) leads to a more consistent profile of induced bandbending, although some anomalies remain. A post hoc examination has been made of the SPV dependence on temperature, doping and metal coverage.

引用

页码：447 / 452

页数：6

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