ARE THEY REALLY SCHOTTKY BARRIERS AFTER ALL

[1] DETECTION OF EXCESS CRYSTALLINE AS AND SB IN III-V OXIDE INTERFACES BY RAMAN-SCATTERING [J]. APPLIED PHYSICS LETTERS, 1977, 31 (11) : 768 - 770

[2] SCHOTTKY BARRIERS - AN EFFECTIVE WORK FUNCTION MODEL [J]. APPLIED PHYSICS LETTERS, 1981, 39 (09) : 727 - 729

[3] EFFECTIVE BARRIER HEIGHTS OF MIXED PHASE CONTACTS - SIZE EFFECTS [J]. APPLIED PHYSICS LETTERS, 1982, 40 (07) : 634 - 636

[4] FREEOUF JL, 1981, B AM PHYS SOC, V26, P285

[5] ROOM-TEMPERATURE INTERFACIAL REACTION IN AU-SEMICONDUCTOR SYSTEMS [J]. APPLIED PHYSICS LETTERS, 1977, 31 (09) : 611 - 612

[6] FERMI LEVEL POSITION AT METAL-SEMICONDUCTOR INTERFACES [J]. PHYSICAL REVIEW, 1964, 134 (3A): : A713 - +

[7] INVERSION-LAYERS ON INP [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1458 - 1461

[8] SCHOTTKY-BARRIER HEIGHTS OF MOLECULAR-BEAM EPITAXIAL METAL-ALGAAS STRUCTURES [J]. APPLIED PHYSICS LETTERS, 1981, 38 (08) : 636 - 638

[9] Simplified and advanced Theory of the Boundary Layer Rectifiers [J]. ZEITSCHRIFT FUR PHYSIK, 1942, 118 (9-10): : 539 - 592

[10] OXIDE-SUBSTRATE AND OXIDE-OXIDE CHEMICAL-REACTIONS IN THERMALLY ANNEALED ANODIC FILMS ON GASB, GAAS, AND GAP [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (11) : 2488 - 2499

[1] DETECTION OF EXCESS CRYSTALLINE AS AND SB IN III-V OXIDE INTERFACES BY RAMAN-SCATTERING [J]. APPLIED PHYSICS LETTERS, 1977, 31 (11) : 768 - 770

[2] SCHOTTKY BARRIERS - AN EFFECTIVE WORK FUNCTION MODEL [J]. APPLIED PHYSICS LETTERS, 1981, 39 (09) : 727 - 729

[3] EFFECTIVE BARRIER HEIGHTS OF MIXED PHASE CONTACTS - SIZE EFFECTS [J]. APPLIED PHYSICS LETTERS, 1982, 40 (07) : 634 - 636

[4] FREEOUF JL, 1981, B AM PHYS SOC, V26, P285

[5] ROOM-TEMPERATURE INTERFACIAL REACTION IN AU-SEMICONDUCTOR SYSTEMS [J]. APPLIED PHYSICS LETTERS, 1977, 31 (09) : 611 - 612

[6] FERMI LEVEL POSITION AT METAL-SEMICONDUCTOR INTERFACES [J]. PHYSICAL REVIEW, 1964, 134 (3A): : A713 - +

[7] INVERSION-LAYERS ON INP [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1458 - 1461

[8] SCHOTTKY-BARRIER HEIGHTS OF MOLECULAR-BEAM EPITAXIAL METAL-ALGAAS STRUCTURES [J]. APPLIED PHYSICS LETTERS, 1981, 38 (08) : 636 - 638

[9] Simplified and advanced Theory of the Boundary Layer Rectifiers [J]. ZEITSCHRIFT FUR PHYSIK, 1942, 118 (9-10): : 539 - 592

[10] OXIDE-SUBSTRATE AND OXIDE-OXIDE CHEMICAL-REACTIONS IN THERMALLY ANNEALED ANODIC FILMS ON GASB, GAAS, AND GAP [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (11) : 2488 - 2499