MACROSCOPIC MODEL OF FORMATION OF VACANCIES IN SEMICONDUCTORS

被引：58

作者：

PHILLIPS, JC ^{[1
]}

VANVECHT.JA ^{[1
]}

机构：

[1] BELL LABS,MURRAY HILL,NJ 07974

来源：

PHYSICAL REVIEW LETTERS | 1973年 / 30卷 / 06期

关键词：

D O I：

10.1103/PhysRevLett.30.220

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

收藏

页码：220 / 223

页数：4

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共 28 条

[21] PERTURBATION-THEORY OF COVALENT CRYSTALS .3. CALCULATION OF FORMATION AND MIGRATION ENERGIES OF A VACANCY IN SI AND GE
SOMA, T
MORITA, A
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1972, 32 (02) : 357 - +
[22] THEORETICAL CALCULATIONS OF THE ENTHALPIES AND ENTROPIES OF DIFFUSION AND VACANCY FORMATION IN SEMICONDUCTORS
SWALIN, RA
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 18 (04) : 290 - 296
[23] CALCULATION OF ELECTRIC-FIELD GRADIENTS IN CRYSTALS USING MOLECULAR WAVE-FUNCTIONS
TAYLOR, DR
[J]. PHYSICAL REVIEW LETTERS, 1972, 29 (16) : 1086 - &
[24] SCALING THEORY OF MELTING TEMPERATURES OF COVALENT CRYSTALS
VANVECHTEN, JA
[J]. PHYSICAL REVIEW LETTERS, 1972, 29 (12) : 769 - +
[25] VANVECHTEN JA, TO BE PUBLISHED
[26] VANVECHTEN JA, 1971, PHYS STATUS SOLIDI B, V42, P261
[27] WATKINS GD, 1970, 10 P INT C PHYS SEM
[28] NON-MUFFIN-TIN ENERGY BANDS FOR SILICON BY KORRINGA-KOHN-ROSTOKER METHOD
WILLIAMS, AR
[J]. PHYSICAL REVIEW B, 1970, 1 (08): : 3417 - &