AN EVALUATION OF FUROX ISOLATION TECHNOLOGY FOR VLSI NMOSFET FABRICATION

被引：6

作者：

TSAI, HH ^{[1
]}

CHEN, SM ^{[1
]}

CHEN, HB ^{[1
]}

WU, CY ^{[1
]}

机构：

[1] IND TECHNOL RES INST,ELECTR RES & SERV ORG,CTR IC DEV,HSINCHU,TAIWAN

来源：

关键词：

D O I：

10.1109/16.2451

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：275 / 284

页数：10

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HUI, J ;

CHIU, TY ;

WONG, S ;

OLDHAM, WG .

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[5]

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