SELECTIVE OXIDATION TECHNOLOGIES FOR HIGH-DENSITY MOS

被引：31

作者：

HUI, J ^{[1
]}

CHIU, TY ^{[1
]}

WONG, S ^{[1
]}

OLDHAM, WG ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,ELECTRON RES LAB,BERKELEY,CA 94720

来源：

ELECTRON DEVICE LETTERS | 1981年 / 2卷 / 10期

关键词：

D O I：

10.1109/EDL.1981.25419

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：244 / 247

页数：4

共 11 条

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[2]

CHIU TY, UNPUBLISHED

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NOZAKI, T ;

ARAKAWA, H ;

SHINODA, M .

APPLIED PHYSICS LETTERS, 1978, 32 (05) :330-331

[7] PLASMA-ENHANCED THERMAL NITRIDATION OF SILICON [J].

ITO, T ;

KATO, I ;

NOZAKI, T ;

NAKAMURA, T ;

ISHIKAWA, H .

APPLIED PHYSICS LETTERS, 1981, 38 (05) :370-372

[8] DIRECT THERMAL NITRIDATION OF SILICON DIOXIDE FILMS IN ANHYDROUS AMMONIA GAS [J].

ITO, T ;

NOZAKI, T ;

ISHIKAWA, H .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (09) :2053-2057

[9] RETARDATION OF DESTRUCTIVE BREAKDOWN OF SIO2-FILMS ANNEALED IN AMMONIA GAS [J].

ITO, T ;

ARAKAWA, H ;

NOZAKI, T ;

ISHIKAWA, H .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (10) :2248-2251

[10]

JENKINS MW, 1977, J ELECTROCHEM SOC, V124, P757, DOI 10.1149/1.2133401

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