STRESS IN ION-IMPLANTED CVD SI3N4 FILMS

被引：50

作者：

EERNISSE, EP ^{[1
]}

机构：

[1] SANDIA LABS,ALBUQUERQUE,NM 87115

来源：

JOURNAL OF APPLIED PHYSICS | 1977年 / 48卷 / 08期

关键词：

D O I：

10.1063/1.324217

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3337 / 3341

页数：5

共 14 条

[1] ATOMIC DISPLACEMENT AND IONIZATION EFFECTS ON OPTICAL-ABSORPTION AND STRUCTURAL-PROPERTIES OF ION-IMPLANTED AL2O3 [J].

ARNOLD, GW ;

KREFFT, GB ;

NORRIS, CB .

APPLIED PHYSICS LETTERS, 1974, 25 (10) :540-542

[2] SOME PROPERTIES OF VAPOR DEPOSITED SILICON NITRIDE FILMS USING SIH4-NH3-H2 SYSTEM [J].

BEAN, KE ;

GLEIM, PS ;

YEAKLEY, RL ;

RUNYAN, WR .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (07) :733-&

[3]

Brice D. K., 1970, Radiation Effects, V6, P77, DOI 10.1080/00337577008235048

[4]

BRICE DK, 1973, ION IMPLANTATION SEM, P171

[5] INTRODUCTION RATES AND ANNEALING OF DEFECTS IN ION-IMPLANTED SIO2 LAYERS ON SI [J].

EERNISSE, EP ;

NORRIS, CB .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (12) :5196-5205

[6] COMPACTION OF ION-IMPLANTED FUSED SILICA [J].

EERNISSE, EP .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (01) :167-174

[7] ROLE OF INTEGRATED LATERAL STRESS IN SURFACE DEFORMATION OF HE-IMPLANTED SURFACES [J].

EERNISSE, EP ;

PICRAUX, ST .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (01) :9-17

[8]

EERNISSE EP, 1977, J APPL PHYS, V48, P2648, DOI 10.1063/1.324309

[9]

EERNISSE EP, 1975, J APPL PHYS, V46, P3223, DOI 10.1063/1.322284

[10]

EERNISSE EP, 1971, ION IMPLANTATION SEM, P17

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