CARRIER TRANSPORT PROCESSES IN P-N-JUNCTION LAYERS WITH A DISTRIBUTION OF TRAP LEVELS

被引：3

作者：

SASAKI, A

ROBSON, PN

机构：

[1] Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield, S1 3JD, Mappin Street

来源：

SOLID-STATE ELECTRONICS | 1991年 / 34卷 / 09期

关键词：

D O I：

10.1016/0038-1101(91)90214-J

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Carrier transport processes are studied for p-n homo- and hetero-junctions where trap levels do not simply exist at the interface, but are distributed in space. The equation for the injected current is derived for the process of electron-hole recombination throughout the depletion region, and processes of electron-trapping and hole-tunnelling are included. The emitter injection efficiency is discussed with respect to the location of the trap levels existing in heterojunctions.

引用

页码：959 / 967

页数：9

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