MEASUREMENTS OF SURFACE ELECTRICAL PROPERTIES OF BOMBARDMENT-CLEANED GERMANIUM

被引:34
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LAW, JT
GARRETT, CGB
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10.1063/1.1722451
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O59 [应用物理学];
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页码:656 / 656
页数:1
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共 9 条
[1]  
AUTLER, 1956, B AM PHYS SOC 2, V1, P145
[2]  
BRATTAIN WH, 1953, AT&T TECH J, V32, P1
[3]   ION BOMBARDMENT-CLEANING OF GERMANIUM AND TITANIUM AS DETERMINED BY LOW-ENERGY ELECTRON DIFFRACTION [J].
FARNSWORTH, HE ;
SCHLIER, RE ;
GEORGE, TH ;
BURGER, RM .
JOURNAL OF APPLIED PHYSICS, 1955, 26 (02) :252-253
[4]   PHYSICAL THEORY OF SEMICONDUCTOR SURFACES [J].
GARRETT, CGB ;
BRATTAIN, WH .
PHYSICAL REVIEW, 1955, 99 (02) :376-387
[5]  
HANDLER P, 1956, B AM PHYS SOC 2, V1, P144
[6]   TEMPORARY TRAPS IN SILICON AND GERMANIUM [J].
HAYNES, JR ;
HORNBECK, JA .
PHYSICAL REVIEW, 1953, 90 (01) :152-153
[7]   THERMALLY INDUCED ACCEPTORS IN SINGLE CRYSTAL GERMANIUM [J].
LOGAN, RA .
PHYSICAL REVIEW, 1953, 91 (03) :757-758
[8]  
MADDEN HH, 1956, B AM PHYS SOC 2, V1, P53
[9]  
SCHLIER RE, 1956, BULL AM PHYS SOC, V1, P53