NODULATION OF ELECTRODEPOSITED COPPER IN THE PRESENCE OF THIOUREA

被引:104
作者
SUAREZ, DF [1 ]
OLSON, FA [1 ]
机构
[1] UNIV UTAH,DEPT MET ENGN,SALT LAKE CITY,UT 84112
关键词
D O I
10.1007/BF01029577
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
This paper considers the effect of thiourea concentration, temperature and current density on electrodeposited copper nodulation. Thiourea concentration was varied from 0 to 60 mg dm-3 in the range 30 to 60-degrees-C and at current densities of 21.5, 48.4, 75.3 and 129.2 mA cm-2 . Thiourea was found to initiate nodulation and this effect was always associated with a large increase in overpotential, i.e., > 100 mV. This phenomenon occurred only when the applied current density was greater than a critical current density, i(c). The critical current density was found to be insensitive to potential over a range of about 100 mV. Also, it decreased nonlinearly but smoothly with increase in thiourea concentration at a given temperature and increased similarly with temperature at a given thiourea concentration. Galvanostatic experiments were carried out to study this phenomenon and a qualitative explanation is given based on potentiodynamic measurements and suppositions as to the possible chemical reactions taking place at the cathode surface based on evidence in the literature.
引用
收藏
页码:1002 / 1010
页数:9
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