WRITE ERASE DEGRADATION IN-SOURCE SIDE INJECTION FLASH EEPROMS - CHARACTERIZATION TECHNIQUES AND WEAROUT MECHANISMS

被引：24

作者：

WELLEKENS, D ^{[1
]}

VANHOUDT, J ^{[1
]}

FARAONE, L ^{[1
]}

GROESENEKEN, G ^{[1
]}

MAES, HE ^{[1
]}

机构：

[1] UNIV WESTERN AUSTRALIA,NEDLANDS,WA 6009,AUSTRALIA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1995年 / 42卷 / 11期

关键词：

D O I：

10.1109/16.469408

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, an in-depth analysis is presented of the write/erase degradation in Source Side Injection Flash EEPROM cells, using the HIMOS cell as a typical example. The different mechanisms governing the degradation are studied and quantified by combining UV erasure and I-V measurements with a charge pumping analysis. Both procedures are shown to disclose two effects contributing to the change of the threshold voltage window: a change in the amount of charge on the floating gate due to a decrease in the injection current, accompanied by the series effect of oxide and interface charges locally trapped above the channel. By correlating the results from charge pumping and I-V measurements, an estimate is made of the spatial extent of the damaged region.

引用

页码：1992 / 1998

页数：7

共 15 条

[1] MOSFET AND MOS CAPACITOR RESPONSES TO IONIZING-RADIATION [J].