MOSFET AND MOS CAPACITOR RESPONSES TO IONIZING-RADIATION

[1] BOESCH HE, 1982, IEEE T NUCL SCI, V29, P1446

[2] CHARGE PUMPING IN MOS DEVICES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (03) : 297 - +

[3] APPARENT INTERFACE STATE DENSITY INTRODUCED BY SPATIAL FLUCTUATIONS OF SURFACE POTENTIAL IN AN MOS STRUCTURE [J]. ELECTRONICS LETTERS, 1970, 6 (22) : 691 - +

[4] FREQUENCY AND TEMPERATURE TESTS FOR LATERAL NONUNIFORMITIES IN MIS CAPACITORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (10) : 1249 - 1255

[5] GATE-WIDTH DEPENDENCE OF RADIATION-INDUCED INTERFACE TRAPS IN METAL-SIO2/SI DEVICES [J]. APPLIED PHYSICS LETTERS, 1983, 42 (10) : 883 - 885

[6] USE OF CHARGE PUMPING CURRENTS TO MEASURE SURFACE STATE DENSITIES IN MOS-TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1976, 19 (03) : 241 - 247

[7] DENSITY OF SIO2-SI INTERFACE STATES - (MOS DEVICES SI OXIDATION 100 DEGREES C O2 + 80 PPM H2O FERMI LEVEL E) [J]. APPLIED PHYSICS LETTERS, 1966, 8 (02) : 31 - &

[8] A RELIABLE APPROACH TO CHARGE-PUMPING MEASUREMENTS IN MOS-TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (01) : 42 - 53

[9] A QUASI-STATIC TECHNIQUE FOR MOS C-V AND SURFACE STATE MEASUREMENTS [J]. SOLID-STATE ELECTRONICS, 1970, 13 (06) : 873 - +

[10] PARAMAGNETIC TRIVALENT SILICON CENTERS IN GAMMA-IRRADIATED METAL-OXIDE-SILICON STRUCTURES [J]. APPLIED PHYSICS LETTERS, 1984, 44 (01) : 96 - 98

[1] BOESCH HE, 1982, IEEE T NUCL SCI, V29, P1446

[2] CHARGE PUMPING IN MOS DEVICES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (03) : 297 - +

[3] APPARENT INTERFACE STATE DENSITY INTRODUCED BY SPATIAL FLUCTUATIONS OF SURFACE POTENTIAL IN AN MOS STRUCTURE [J]. ELECTRONICS LETTERS, 1970, 6 (22) : 691 - +

[4] FREQUENCY AND TEMPERATURE TESTS FOR LATERAL NONUNIFORMITIES IN MIS CAPACITORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (10) : 1249 - 1255

[5] GATE-WIDTH DEPENDENCE OF RADIATION-INDUCED INTERFACE TRAPS IN METAL-SIO2/SI DEVICES [J]. APPLIED PHYSICS LETTERS, 1983, 42 (10) : 883 - 885

[6] USE OF CHARGE PUMPING CURRENTS TO MEASURE SURFACE STATE DENSITIES IN MOS-TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1976, 19 (03) : 241 - 247

[7] DENSITY OF SIO2-SI INTERFACE STATES - (MOS DEVICES SI OXIDATION 100 DEGREES C O2 + 80 PPM H2O FERMI LEVEL E) [J]. APPLIED PHYSICS LETTERS, 1966, 8 (02) : 31 - &

[8] A RELIABLE APPROACH TO CHARGE-PUMPING MEASUREMENTS IN MOS-TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (01) : 42 - 53

[9] A QUASI-STATIC TECHNIQUE FOR MOS C-V AND SURFACE STATE MEASUREMENTS [J]. SOLID-STATE ELECTRONICS, 1970, 13 (06) : 873 - +

[10] PARAMAGNETIC TRIVALENT SILICON CENTERS IN GAMMA-IRRADIATED METAL-OXIDE-SILICON STRUCTURES [J]. APPLIED PHYSICS LETTERS, 1984, 44 (01) : 96 - 98