AN IMPROVED JOSEPHSON POTENTIOMETER SYSTEM FOR THE MEASUREMENT OF THE QUANTUM HALL-EFFECT

被引：10

作者：

KINOSHITA, J

INAGAKI, K

MURAYAMA, Y

ENDO, T

YAMANOUCHI, C

YOSHIHIRO, K

WAKABAYASHI, J

KAWAJI, S

机构：

来源：

IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT | 1987年 / 36卷 / 02期

关键词：

D O I：

10.1109/TIM.1987.6312675

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：230 / 233

页数：4

共 5 条

[1] TEMPERATURE-DEPENDENCE OF THE QUANTUM HALL RESISTANCE [J].

CAGE, ME ;

FIELD, BF ;

DZIUBA, RF ;

GIRVIN, SM ;

GOSSARD, AC ;

TSUI, DC .

PHYSICAL REVIEW B, 1984, 30 (04) :2286-2288

[2] MEASUREMENT SYSTEM FOR QUANTUM HALL-EFFECT UTILIZING A JOSEPHSON POTENTIOMETER [J].

ENDO, T ;

MURAYAMA, Y ;

KOYANAGI, M ;

KINOSHITA, J ;

INAGAKI, K ;

YAMANOUCHI, C ;

YOSHIHIRO, K .

IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT, 1985, 34 (02) :323-327

[3] AC-JOSEPHSON-EFFECT DETERMINATION OF E/H - STANDARD OF ELECTROCHEMICAL POTENTIAL BASED ON MACROSCOPIC QUANTUM PHASE COHERENCE IN SUPERCONDUCTORS [J].

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DENENSTEIN, A ;

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PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (05) :1487-+

[4] NONEQUILIBRIUM ELECTRONS IN THE QUANTUM HALL-EFFECT REGIME [J].

YOSHIHIRO, K ;

KINOSHITA, J ;

INAGAKI, K ;

YAMANOUCHI, C ;

MURAYAMA, Y ;

ENDO, T ;

KOYANAGI, M ;

WAKABAYASHI, J ;

KAWAJI, S .

SURFACE SCIENCE, 1986, 170 (1-2) :193-201

[5] QUANTUM HALL-EFFECT IN SILICON METAL-OXIDE-SEMICONDUCTOR INVERSION-LAYERS - EXPERIMENTAL CONDITIONS FOR DETERMINATION OF H/E2 [J].

YOSHIHIRO, K ;

KINOSHITA, J ;

INAGAKI, K ;

YAMANOUCHI, C ;

ENDO, T ;

MURAYAMA, Y ;

KOYANAGI, M ;

YAGI, A ;

WAKABAYASHI, J ;

KAWAJI, S .

PHYSICAL REVIEW B, 1986, 33 (10) :6874-6896

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