FABRICATION AND ELECTRICAL-PROPERTIES OF EPITAXIAL LAYERS OF GAAS DOPED WITH MANGANESE

被引：14

作者：

GOUSKOV, L ^{[1
]}

BILAC, S ^{[1
]}

PIMENTEL, J ^{[1
]}

GOUSKOV, A ^{[1
]}

机构：

[1] UNIV ESTADUAL CAMPINAS, INST FIS GLEB WATAGHIN, CAMPINAS, SP, BRAZIL

来源：

SOLID-STATE ELECTRONICS | 1977年 / 20卷 / 08期

关键词：

D O I：

10.1016/0038-1101(77)90039-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：653 / 656

页数：4

相关论文

共 10 条

[1] THERMAL ACTIVATION-ENERGY OF MANGANESE ACCEPTORS IN GALLIUM-ARSENIDE AS A FUNCTION OF IMPURITY SPACING
BLAKEMORE, JS
BROWN, WJ
STASS, ML
WOODBURY, DA
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (07) : 3352 - 3354
[2] TRANSPORT AND PHOTOELECTRICAL PROPERTIES OF GALLIUM-ARSENIDE CONTAINING DEEP ACCEPTORS
BROWN, WJ
BLAKEMOR.JS
[J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (05) : 2242 - &
[3] RESIDUAL ACCEPTORS IN NATURAL GASB AND GAXIN1-XSB - THEIR CONTRIBUTION TO TRANSPORT BETWEEN 4.7 AND 300 DEGREES K
CAMPOS, MD
GOUSKOV, A
GOUSKOV, L
PONS, JC
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (06) : 2642 - 2646
[4] ELECTRICAL PROPERTIES OF N-TYPE GERMANIUM
DEBYE, PP
CONWELL, EM
[J]. PHYSICAL REVIEW, 1954, 93 (04): : 693 - 706
[5] BAND STRUCTURE AND ELECTRON TRANSPORT OF GAAS
EHRENREICH, H
[J]. PHYSICAL REVIEW, 1960, 120 (06): : 1951 - 1963
[6] PREPARATION AND PROPERTIES OF MN-DOPED EPITAXIAL GALLIUM-ARSENIDE
KORDOS, P
JANSAK, L
BENC, V
[J]. SOLID-STATE ELECTRONICS, 1975, 18 (03) : 223 - 226
[7] MADELUNG O, 1964, PHYSICS III V COMPOU
[8] SEAGEN EH, 1974, PHYS REV B, V10, P1760
[9] BEHAVIOR OF MANGANESE IN GAAS
VIELAND, LJ
[J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (06) : 2007 - &
[10] IMPURITY CONDUCTION AND METAL-NONMETAL TRANSITION IN MANGANESE-DOPED GALLIUM-ARSENIDE
WOODBURY, DA
BLAKEMOR.JS
[J]. PHYSICAL REVIEW B, 1973, 8 (08): : 3803 - 3810