ELECTRON-PARAMAGNETIC-RESONANCE STUDY OF HEAT-TREATMENT CENTERS IN N-TYPE SILICON

被引：23

作者：

BEKMAN, HHPT ^{[1
]}

GREGORKIEWICZ, T ^{[1
]}

VANWEZEP, DA ^{[1
]}

AMMERLAAN, CAJ ^{[1
]}

机构：

[1] POLISH ACAD SCI,INST PHYS,WARSAW 42,POLAND

来源：

关键词：

D O I：

10.1063/1.339076

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4404 / 4405

页数：2

共 8 条

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HILD, E
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[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1985, 90 (02): : K151 - K156
[3] ELECTRON-PARAMAGNETIC-RES STUDIES OF HEAT-TREATMENT CENTERS IN P-TYPE SILICON
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VANWEZEP, DA
BEKMAN, HHPT
AMMERLAAN, CAJ
[J]. PHYSICAL REVIEW B, 1987, 35 (08): : 3810 - 3817
[4] LEE KM, 1985, P INT C MICR ID EL D, P263
[5] EPR-SPECTRA OF HEAT-TREATMENT CENTERS IN OXYGEN-RICH SILICON
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SIEVERTS, EG
AMMERLAAN, CAJ
[J]. SOLID STATE COMMUNICATIONS, 1978, 25 (12) : 987 - 990
[6] MULLER SH, 1979, I PHYS C SER, V46, P297
[7] ELECTRON-SPIN RESONANCE STUDY OF OXYGEN DONORS IN SILICON-CRYSTALS
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SUMINO, K
IWAIZUMI, M
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (11) : 6594 - 6600
[8] PARAMAGNETIC-RESONANCE OF A NEW-OXYGEN-DONOR RELATED CENTER IN SILICON
WORNER, R
SCHIRMER, OF
[J]. PHYSICAL REVIEW B, 1986, 34 (02): : 1381 - 1383