PARAMAGNETIC-RESONANCE OF A NEW-OXYGEN-DONOR RELATED CENTER IN SILICON

被引：10

作者：

WORNER, R

SCHIRMER, OF

机构：

来源：

PHYSICAL REVIEW B | 1986年 / 34卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.34.1381

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1381 / 1383

页数：3

共 10 条

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[2]

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[3] EARLY STAGES OF OXYGEN SEGREGATION AND PRECIPITATION IN SILICON [J].

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[4]

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APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1984, 34 (03) :155-161

[6]

LEE KM, 1985, MRS S P, V46

[7] EPR-SPECTRA OF HEAT-TREATMENT CENTERS IN OXYGEN-RICH SILICON [J].

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SOLID STATE COMMUNICATIONS, 1978, 25 (12) :987-990

[8]

PENSL G, COMMUNICATION

[9] ELECTRON-SPIN RESONANCE STUDY OF OXYGEN DONORS IN SILICON-CRYSTALS [J].

SUEZAWA, M ;

SUMINO, K ;

IWAIZUMI, M .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (11) :6594-6600

[10]

[No title captured]

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