PRECIPITATION OF OXYGEN AT 485-DEGREES-C - DIRECT EVIDENCE FOR ACCELERATED DIFFUSION OF OXYGEN IN SILICON

被引:49
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BERGHOLZ, W
HUTCHISON, JL
PIROUZ, P
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D O I
10.1063/1.335760
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O59 [应用物理学];
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页码:3419 / 3424
页数:6
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