LOW-TEMPERATURE CHARGE-DENSITY-WAVE DYNAMICS AND SWITCHING IN NBSE3

被引：25

作者：

ADELMAN, TL ^{[1
]}

MCCARTEN, J ^{[1
]}

MAHER, MP ^{[1
]}

DICARLO, DA ^{[1
]}

THORNE, RE ^{[1
]}

机构：

[1] CORNELL UNIV,CTR MAT SCI,ITHACA,NY 14853

来源：

PHYSICAL REVIEW B | 1993年 / 47卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.47.4033

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have studied charge-density-wave (CDW) transport in NbSe3 at temperatures below 45 K. Between the threshold electric field E(T) and a second characteristic field E(T)*, the CDW conductivity varies as sigma(CDW) is-proportional-to exp(-DELTA/k(B)T), with an activation energy DELTA comparable to the CDW gap. Above E(T)*, the CDW conductivity increases, in many crystals via an abrupt ''switch,'' to a much larger, only weakly temperature-dependent value. Contrary to previous suggestions, we find that E(T)* is determined by bulk CDW pinning and dynamics, not by isolated defects. We show that this behavior has strong analogs in the semiconducting CDW materials, and compare it with predictions based upon a model of CDW-normal-carrier interactions proposed by Littlewood.

引用

页码：4033 / 4036

页数：4

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