DEPENDENCE ON THE IN CONCENTRATION OF THE PIEZOELECTRIC FIELD IN (111)B INGAAS/GAAS STRAINED HETEROSTRUCTURES

被引：64

作者：

SANCHEZROJAS, JL

SACEDON, A

GONZALEZSANZ, F

CALLEJA, E

MUNOZ, E

机构：

[1] Departamento Ingeniería Electrónica, Universidad Politécnica de Madrid, Ciudad Universitaria

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 16期

关键词：

D O I：

10.1063/1.112787

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A series of (111)B InxGa1-x(As/GaAs multiple quantum well p-i-n structures have been investigated via low temperature photocurrent and photoluminescence spectroscopies. The indium mole fraction was in the range of 0.07-0.23. Evolution of the experimental blueshifts of the transition energies, with the external bias, agreed very well with the theoretical calculations. This allowed us to obtain precise information about the piezoelectric constant, e14, for the various In compositions. For the range of x investigated, we have found e14(x) to be linear with x but significantly lower than predicted by a simple linear interpolation of the accepted values for GaAs and InAs. (C) 1994 American Institute of Physics.

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页码：2042 / 2044

页数：3

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