BROAD SATURATION EFFECT AND BACKGROUND EPR LINE IN PHOSPHORUS-DOPED SILICON

被引：9

作者：

MARKO, JR

机构：

来源：

关键词：

D O I：

10.1016/0375-9601(68)91156-0

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：119 / &

共 9 条

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