ESR OF IONIZED DONOR PAIRS

被引：4

作者：

KANG, ST

机构：

来源：

PROGRESS OF THEORETICAL PHYSICS | 1967年 / 38卷 / 03期

关键词：

D O I：

10.1143/PTP.38.525

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：525 / &

共 7 条

[1]

KELDYSH LV, 1966, FIZ TVERD TELA+, V8, P64

[2]

LUTTINGER JM, 1955, PHYS REV, V98, P915

[3] IMPURITY CONDUCTION AT LOW CONCENTRATIONS [J].

MILLER, A ;

ABRAHAMS, E .

PHYSICAL REVIEW, 1960, 120 (03) :745-755

[4] SPIN RESONANCE OF IMPURITY ATOMS IN SILICON [J].

SLICHTER, CP .

PHYSICAL REVIEW, 1955, 99 (02) :479-480

[5] SPIN-LATTIC RELAXATION OF SHALLOW DONORS IN HEAVILY DOPED SI [J].

SUGIHARA, K .

[6] MICROWAVE ABSORPTION IN SILICON AT LOW TEMPERATURES [J].

TANAKA, S ;

HANAMURA, E ;

KOBAYASHI, M ;

UCHINOKURA, K .

PHYSICAL REVIEW, 1964, 134 (1A) :A256-+

[7] IMPURITY CONDUCTION IN P-TYPE SILICON AT MICROWAVE FREQUENCIES [J].

TANAKA, S ;

FAN, HY .

PHYSICAL REVIEW, 1963, 132 (04) :1516-&