MICROWAVE ABSORPTION IN SILICON AT LOW TEMPERATURES

被引：41

作者：

TANAKA, S

HANAMURA, E

KOBAYASHI, M

UCHINOKURA, K

机构：

来源：

PHYSICAL REVIEW | 1964年 / 134卷 / 1A期

关键词：

D O I：

10.1103/PhysRev.134.A256

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：A256 / +

页数：1

共 23 条

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[8]

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[10] THE RESISTIVITY AND HALL EFFECT OF GERMANIUM AT LOW TEMPERATURES [J].

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