IMPURITY CONDUCTION AT LOW CONCENTRATIONS

[1] ABRAHAMS E, 1957, PHYS REV, V107, P481

[2] DEFORMATION POTENTIALS AND MOBILITIES IN NON-POLAR CRYSTALS [J]. PHYSICAL REVIEW, 1950, 80 (01): : 72 - 80

[3] IMPURITY CONDUCTION IN INDIUM-DOPED GERMANIUM [J]. PHILOSOPHICAL MAGAZINE, 1959, 4 (41): : 560 - 576

[4] IMPURITY BAND CONDUCTION IN GERMANIUM AND SILICON [J]. PHYSICAL REVIEW, 1956, 103 (01): : 51 - 60

[5] EXCHANGE EFFECTS IN SPIN RESONANCE OF IMPURITY ATOMS IN SILICON [J]. PHYSICAL REVIEW, 1955, 100 (06): : 1784 - 1786

[6] ELECTRON SPIN RESONANCE EXPERIMENTS ON DONORS IN SILICON .2. ELECTRON SPIN RELAXATION EFFECTS [J]. PHYSICAL REVIEW, 1959, 114 (05): : 1245 - 1256

[7] EFFECT OF MINORITY IMPURITIES ON IMPURITY CONDUCTION IN P-TYPE GERMANIUM [J]. PHYSICAL REVIEW, 1959, 113 (04): : 999 - 1001

[8] IMPURITY CONDUCTION IN TRANSMUTATION-DOPED P-TYPE GERMANIUM [J]. PHYSICAL REVIEW, 1960, 119 (04): : 1238 - 1245

[9] RESISTIVITY AND HALL COEFFICIENT OF ANTIMONY-DOPED GERMANIUM AT LOW TEMPERATURES [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 6 (01) : 69 - 80

[10] ELECTRICAL PROPERTIES OF GERMANIUM SEMICONDUCTORS AT LOW TEMPERATURES [J]. PHYSICAL REVIEW, 1955, 99 (02): : 406 - 419

[1] ABRAHAMS E, 1957, PHYS REV, V107, P481

[2] DEFORMATION POTENTIALS AND MOBILITIES IN NON-POLAR CRYSTALS [J]. PHYSICAL REVIEW, 1950, 80 (01): : 72 - 80

[3] IMPURITY CONDUCTION IN INDIUM-DOPED GERMANIUM [J]. PHILOSOPHICAL MAGAZINE, 1959, 4 (41): : 560 - 576

[4] IMPURITY BAND CONDUCTION IN GERMANIUM AND SILICON [J]. PHYSICAL REVIEW, 1956, 103 (01): : 51 - 60

[5] EXCHANGE EFFECTS IN SPIN RESONANCE OF IMPURITY ATOMS IN SILICON [J]. PHYSICAL REVIEW, 1955, 100 (06): : 1784 - 1786

[6] ELECTRON SPIN RESONANCE EXPERIMENTS ON DONORS IN SILICON .2. ELECTRON SPIN RELAXATION EFFECTS [J]. PHYSICAL REVIEW, 1959, 114 (05): : 1245 - 1256

[7] EFFECT OF MINORITY IMPURITIES ON IMPURITY CONDUCTION IN P-TYPE GERMANIUM [J]. PHYSICAL REVIEW, 1959, 113 (04): : 999 - 1001

[8] IMPURITY CONDUCTION IN TRANSMUTATION-DOPED P-TYPE GERMANIUM [J]. PHYSICAL REVIEW, 1960, 119 (04): : 1238 - 1245

[9] RESISTIVITY AND HALL COEFFICIENT OF ANTIMONY-DOPED GERMANIUM AT LOW TEMPERATURES [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 6 (01) : 69 - 80

[10] ELECTRICAL PROPERTIES OF GERMANIUM SEMICONDUCTORS AT LOW TEMPERATURES [J]. PHYSICAL REVIEW, 1955, 99 (02): : 406 - 419