DEPLETION WIDTH AND CAPACITANCE TRANSIENT FORMULAS FOR DEEP TRAPS OF HIGH-CONCENTRATION

被引：18

作者：

LOOK, DC ^{[1
]}

SIZELOVE, JR ^{[1
]}

机构：

[1] WRIGHT LAB,SOLID STATE ELECTR DIRECTORATE,ELRA,WRIGHT PATTERSON AFB,OH 45433

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 78卷 / 04期

关键词：

D O I：

10.1063/1.360086

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We derive expressions for the depletion width and capacitance transient applicable to traps which may be deep and of high concentration. The new results are compared with those obtained from the commonly used formulas, and also from an exact analysis. Experimental deep level transient spectroscopic data for EL2 in GaAs are in good agreement. (C) 1995 American Institute of Physics.

引用

页码：2848 / 2850

页数：3

共 7 条

[1] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].

LANG, DV .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3023-3032

[2]

Look D. C., 1989, ELECTRICAL CHARACTER

[3]

Look D C, UNPUB

[4] ACCURATE DETERMINATION OF THE FREE CARRIER CAPTURE KINETICS OF DEEP TRAPS BY SPACE-CHARGE METHODS [J].

PONS, D .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) :3644-3657

[5]

RHODERICK EH, 1988, METAL SEMICONDUCTOR, P70

[6] DETERMINATION OF CARRIER CAPTURE CROSS-SECTIONS OF TRAPS BY DEEP LEVEL TRANSIENT SPECTROSCOPY OF SEMICONDUCTORS [J].

ZHAO, JH ;

SCHLESINGER, TE ;

MILNES, AG .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (07) :2865-2870

[7] ON THE DETERMINATION OF THE SPATIAL-DISTRIBUTION OF DEEP CENTERS IN SEMICONDUCTING THIN-FILMS FROM CAPACITANCE TRANSIENT SPECTROSCOPY [J].

ZOHTA, Y ;

WATANABE, MO .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (03) :1809-1811

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