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ON THE DETERMINATION OF THE SPATIAL-DISTRIBUTION OF DEEP CENTERS IN SEMICONDUCTING THIN-FILMS FROM CAPACITANCE TRANSIENT SPECTROSCOPY
被引:175
作者
:
ZOHTA, Y
论文数:
0
引用数:
0
h-index:
0
ZOHTA, Y
WATANABE, MO
论文数:
0
引用数:
0
h-index:
0
WATANABE, MO
机构
:
来源
:
JOURNAL OF APPLIED PHYSICS
|
1982年
/ 53卷
/ 03期
关键词
:
D O I
:
10.1063/1.330683
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:1809 / 1811
页数:3
相关论文
共 15 条
[1]
DETERMINATION OF DEEP LEVELS IN SEMICONDUCTORS FROM C-V MEASUREMENTS
GLOVER, GH
论文数:
0
引用数:
0
h-index:
0
GLOVER, GH
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1972,
ED19
(02)
: 138
-
&
[2]
Lang D.V., 1979, TOP APPL PHYS, P93, DOI 10.1007/3540095950_9
[3]
DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS
LANG, DV
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
LANG, DV
[J].
JOURNAL OF APPLIED PHYSICS,
1974,
45
(07)
: 3023
-
3032
[4]
FAST CAPACITANCE TRANSIENT APPARATUS - APPLICATION TO ZNO AND O CENTERS IN GAP PARANORMAL JUNCTIONS
LANG, DV
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
LANG, DV
[J].
JOURNAL OF APPLIED PHYSICS,
1974,
45
(07)
: 3014
-
3022
[5]
ADMITTANCE SPECTROSCOPY OF IMPURITY LEVELS IN SCHOTTKY BARRIERS
LOSEE, DL
论文数:
0
引用数:
0
h-index:
0
机构:
EASTMAN KODAK CO,RES LABS,ROCHESTER,NY 14650
EASTMAN KODAK CO,RES LABS,ROCHESTER,NY 14650
LOSEE, DL
[J].
JOURNAL OF APPLIED PHYSICS,
1975,
46
(05)
: 2204
-
2214
[6]
CAPACITANCE TRANSIENT SPECTROSCOPY
MILLER, GL
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
MILLER, GL
LANG, DV
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
LANG, DV
KIMERLING, LC
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
KIMERLING, LC
[J].
ANNUAL REVIEW OF MATERIALS SCIENCE,
1977,
7
: 377
-
448
[7]
THERMAL AND OPTICAL EMISSION AND CAPTURE RATES AND CROSS SECTIONS OF ELECTRONS AND HOLES AT IMPERFECTION CENTERS IN SEMICONDUCTORS FROM PHOTO AND DARK JUNCTION CURRENT AND CAPACITANCE EXPERIMENTS
SAH, CT
论文数:
0
引用数:
0
h-index:
0
SAH, CT
FORBES, L
论文数:
0
引用数:
0
h-index:
0
FORBES, L
ROSIER, LL
论文数:
0
引用数:
0
h-index:
0
ROSIER, LL
TASCH, AF
论文数:
0
引用数:
0
h-index:
0
TASCH, AF
[J].
SOLID-STATE ELECTRONICS,
1970,
13
(06)
: 759
-
+
[8]
CAPACITANCE MEASUREMENTS ON AU-GAAS SCHOTTKY BARRIERS
SENECHAL, RR
论文数:
0
引用数:
0
h-index:
0
SENECHAL, RR
BASINSKI, J
论文数:
0
引用数:
0
h-index:
0
BASINSKI, J
[J].
JOURNAL OF APPLIED PHYSICS,
1968,
39
(10)
: 4581
-
+
[9]
CAPACITANCE OF JUNCTIONS ON GOLD-DOPED SILICON
SENECHAL, RR
论文数:
0
引用数:
0
h-index:
0
SENECHAL, RR
BASINSKI, J
论文数:
0
引用数:
0
h-index:
0
BASINSKI, J
[J].
JOURNAL OF APPLIED PHYSICS,
1968,
39
(08)
: 3723
-
+
[10]
WATANABE MO, 1981, JPN J APPL PHYS, V20, P429
←
1
2
→
共 15 条
[1]
DETERMINATION OF DEEP LEVELS IN SEMICONDUCTORS FROM C-V MEASUREMENTS
GLOVER, GH
论文数:
0
引用数:
0
h-index:
0
GLOVER, GH
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1972,
ED19
(02)
: 138
-
&
[2]
Lang D.V., 1979, TOP APPL PHYS, P93, DOI 10.1007/3540095950_9
[3]
DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS
LANG, DV
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
LANG, DV
[J].
JOURNAL OF APPLIED PHYSICS,
1974,
45
(07)
: 3023
-
3032
[4]
FAST CAPACITANCE TRANSIENT APPARATUS - APPLICATION TO ZNO AND O CENTERS IN GAP PARANORMAL JUNCTIONS
LANG, DV
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
LANG, DV
[J].
JOURNAL OF APPLIED PHYSICS,
1974,
45
(07)
: 3014
-
3022
[5]
ADMITTANCE SPECTROSCOPY OF IMPURITY LEVELS IN SCHOTTKY BARRIERS
LOSEE, DL
论文数:
0
引用数:
0
h-index:
0
机构:
EASTMAN KODAK CO,RES LABS,ROCHESTER,NY 14650
EASTMAN KODAK CO,RES LABS,ROCHESTER,NY 14650
LOSEE, DL
[J].
JOURNAL OF APPLIED PHYSICS,
1975,
46
(05)
: 2204
-
2214
[6]
CAPACITANCE TRANSIENT SPECTROSCOPY
MILLER, GL
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
MILLER, GL
LANG, DV
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
LANG, DV
KIMERLING, LC
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
KIMERLING, LC
[J].
ANNUAL REVIEW OF MATERIALS SCIENCE,
1977,
7
: 377
-
448
[7]
THERMAL AND OPTICAL EMISSION AND CAPTURE RATES AND CROSS SECTIONS OF ELECTRONS AND HOLES AT IMPERFECTION CENTERS IN SEMICONDUCTORS FROM PHOTO AND DARK JUNCTION CURRENT AND CAPACITANCE EXPERIMENTS
SAH, CT
论文数:
0
引用数:
0
h-index:
0
SAH, CT
FORBES, L
论文数:
0
引用数:
0
h-index:
0
FORBES, L
ROSIER, LL
论文数:
0
引用数:
0
h-index:
0
ROSIER, LL
TASCH, AF
论文数:
0
引用数:
0
h-index:
0
TASCH, AF
[J].
SOLID-STATE ELECTRONICS,
1970,
13
(06)
: 759
-
+
[8]
CAPACITANCE MEASUREMENTS ON AU-GAAS SCHOTTKY BARRIERS
SENECHAL, RR
论文数:
0
引用数:
0
h-index:
0
SENECHAL, RR
BASINSKI, J
论文数:
0
引用数:
0
h-index:
0
BASINSKI, J
[J].
JOURNAL OF APPLIED PHYSICS,
1968,
39
(10)
: 4581
-
+
[9]
CAPACITANCE OF JUNCTIONS ON GOLD-DOPED SILICON
SENECHAL, RR
论文数:
0
引用数:
0
h-index:
0
SENECHAL, RR
BASINSKI, J
论文数:
0
引用数:
0
h-index:
0
BASINSKI, J
[J].
JOURNAL OF APPLIED PHYSICS,
1968,
39
(08)
: 3723
-
+
[10]
WATANABE MO, 1981, JPN J APPL PHYS, V20, P429
←
1
2
→