SATURATION REGION MODEL FOR A-SIH TFTS USING A QUASI-2-DIMENSIONAL APPROACH

被引：1

作者：

KUO, JB

CHEN, SS

机构：

[1] Dept. of Electrical Eng., National Taiwan University, Taipei, Taiwan 106-17, Roosevelt Rd., #7

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 21期

关键词：

SEMICONDUCTOR DEVICES AND MATERIALS;

D O I：

10.1049/el:19931262

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A saturation region model for a-Si:H thin film transistors using a quasi-two-dimensional approach is reported. As verified by the published data, this analytical saturation region model provides an accurate prediction of the drain current characteristics of an a-Si:H TFT.

引用

页码：1896 / 1897

页数：2

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[2]

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[3]

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SHUR, M ;

HACK, M ;

SHAW, JG .

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[5] PHYSICS OF AMORPHOUS-SILICON BASED ALLOY FIELD-EFFECT TRANSISTORS [J].

SHUR, M ;

HACK, M .

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[6]

SHUR M, 1989, J APPL PHYS, V66, P338

[7]

Thomson M. J., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P192

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