PHYSICS OF AMORPHOUS-SILICON BASED ALLOY FIELD-EFFECT TRANSISTORS

[1] AST DG, 1982, 1982 INT DISPL RES C, P152

[2] ON THE CURRENT-VOLTAGE CHARACTERISTICS OF AMORPHOUS HYDROGENATED SILICON SCHOTTKY DIODES [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) : 1045 - 1051

[3] ANALYSIS OF FIELD-EFFECT AND CAPACITANCE-VOLTAGE MEASUREMENTS IN AMORPHOUS-SEMICONDUCTORS [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1980, 42 (01): : 149 - 165

[4] Grove A S, 1967, PHYS TECHNOLOGY SEMI

[5] COMPUTER-SIMULATION OF AMORPHOUS-SILICON BASED ALLOY P-I-N SOLAR-CELLS [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (05) : 140 - 143

[6] THEORETICAL MODELING OF AMORPHOUS SILICON-BASED ALLOY P-I-N SOLAR-CELLS [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (10) : 5858 - 5863

[7] INTENSITY DEPENDENCE OF THE MINORITY-CARRIER DIFFUSION LENGTH IN AMORPHOUS-SILICON BASED ALLOYS [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (08) : 2967 - 2971

[8] AMORPHOUS-SILICON BASED ALLOY SOLAR-CELL MODELING WITH NEW DIFFUSION LENGTH INTERPRETATION [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) : 1115 - 1118

[9] STUDY OF GAP STATES IN HYDROGENATED AMORPHOUS-SILICON BY TRANSIENT AND STEADY-STATE PHOTOCONDUCTIVITY MEASUREMENTS [J]. PHYSICAL REVIEW B, 1983, 27 (12): : 7460 - 7465

[10] KISHIDA S, 1983, JPN J APPL PHYS, V22

[1] AST DG, 1982, 1982 INT DISPL RES C, P152

[2] ON THE CURRENT-VOLTAGE CHARACTERISTICS OF AMORPHOUS HYDROGENATED SILICON SCHOTTKY DIODES [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) : 1045 - 1051

[3] ANALYSIS OF FIELD-EFFECT AND CAPACITANCE-VOLTAGE MEASUREMENTS IN AMORPHOUS-SEMICONDUCTORS [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1980, 42 (01): : 149 - 165

[4] Grove A S, 1967, PHYS TECHNOLOGY SEMI

[5] COMPUTER-SIMULATION OF AMORPHOUS-SILICON BASED ALLOY P-I-N SOLAR-CELLS [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (05) : 140 - 143

[6] THEORETICAL MODELING OF AMORPHOUS SILICON-BASED ALLOY P-I-N SOLAR-CELLS [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (10) : 5858 - 5863

[7] INTENSITY DEPENDENCE OF THE MINORITY-CARRIER DIFFUSION LENGTH IN AMORPHOUS-SILICON BASED ALLOYS [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (08) : 2967 - 2971

[8] AMORPHOUS-SILICON BASED ALLOY SOLAR-CELL MODELING WITH NEW DIFFUSION LENGTH INTERPRETATION [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) : 1115 - 1118

[9] STUDY OF GAP STATES IN HYDROGENATED AMORPHOUS-SILICON BY TRANSIENT AND STEADY-STATE PHOTOCONDUCTIVITY MEASUREMENTS [J]. PHYSICAL REVIEW B, 1983, 27 (12): : 7460 - 7465

[10] KISHIDA S, 1983, JPN J APPL PHYS, V22