ON THE CURRENT-VOLTAGE CHARACTERISTICS OF AMORPHOUS HYDROGENATED SILICON SCHOTTKY DIODES

被引：52

作者：

CHEN, I

LEE, S

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 02期

关键词：

D O I：

10.1063/1.330549

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1045 / 1051

页数：7

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共 35 条

[1] RECENT DEVELOPMENTS IN AMORPHOUS-SILICON SOLAR-CELLS
CARLSON, DE
[J]. SOLAR ENERGY MATERIALS, 1980, 3 (04): : 503 - 518
[2] EFFECTS OF GEMINATE RECOMBINATION ON THE PHOTO-VOLTAIC CHARACTERISTICS OF ALPHA-SI-H SCHOTTKY-BARRIER SOLAR-CELLS
CHEN, I
MORT, J
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (10) : 952 - 955
[3] CHEN IG, UNPUB
[4] DLTS STUDY OF THE GAP STATES OF AMORPHOUS SI1-XHX ALLOYS
COHEN, JD
LANG, DV
BEAN, JC
HARBISON, JP
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 581 - 586
[5] DIRECT MEASUREMENT OF THE BULK-DENSITY OF GAP STATES IN N-TYPE HYDROGENATED AMORPHOUS-SILICON
COHEN, JD
LANG, DV
HARBISON, JP
[J]. PHYSICAL REVIEW LETTERS, 1980, 45 (03) : 197 - 200
[6] OBSERVATION OF ELECTRON AND HOLE TRAPS IN HYDROGENATED AMORPHOUS-SILICON BY VOLTAGE-EXCITED AND LASER-EXCITED DEEP LEVEL TRANSIENT SPECTROSCOPY
COHEN, JD
LANG, DV
HARBISON, JP
BEAN, JC
[J]. SOLAR CELLS, 1980, 2 (03): : 331 - 347
[7] AN ACCURATE NUMERICAL STEADY-STATE 1-DIMENSIONAL SOLUTION OF P-N JUNCTION
DEMARI, A
[J]. SOLID-STATE ELECTRONICS, 1968, 11 (01) : 33 - +
[8] CARRIER RECOMBINATION IN ORTHORHOMBIC SULFUR
DOLEZALEK, FK
SPEAR, WE
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1975, 36 (7-8) : 819 - 825
[9] DRESNER J, 1981, MAR AIP C P TETR BON, P317
[10] RECENT DEVELOPMENTS IN AMORPHOUS-SILICON P-N-JUNCTION DEVICES
GIBSON, RA
SPEAR, WE
LECOMBER, PG
SNELL, AJ
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 725 - 730

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