ON THE CURRENT-VOLTAGE CHARACTERISTICS OF AMORPHOUS HYDROGENATED SILICON SCHOTTKY DIODES

被引：52

作者：

CHEN, I

LEE, S

机构：

来源：

关键词：

D O I：

10.1063/1.330549

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1045 / 1051

页数：7

共 35 条

[21] MORT J, 1980, PHOTOGR SCI ENG, V24, P241
[22] STUDIES OF HYDROGENATED AMORPHOUS-SILICON BY XEROGRAPHIC DISCHARGE TECHNIQUES
MORT, J
GRAMMATICA, S
KNIGHTS, JC
LUJAN, R
[J]. SOLAR CELLS, 1980, 2 (04): : 451 - 459
[23] MORT J, COMMUNICATION
[24] SHIMIZU I, 1980, PHOTOGR SCI ENG, V24, P251
[25] PHOTORECEPTOR OF A-SI-H WITH DIODE-LIKE STRUCTURE FOR ELECTROPHOTOGRAPHY
SHIMIZU, I
SHIRAI, S
INOUE, E
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (04) : 2776 - 2781
[26] DETERMINATION OF DEPLETION WIDTH IN AMORPHOUS MATERIALS USING A SIMPLE ANALYTICAL MODEL
SHUR, M
CZUBATYJ, W
MADAN, A
[J]. SOLAR ENERGY MATERIALS, 1980, 2 (03): : 349 - 361
[27] SNELL AJ, 1980, 15TH P INT C PHYS SE
[28] ELECTRONIC PROPERTIES OF SUBSTITUTED DOPED AMORPHOUS SI AND GE
SPEAR, WE
LECOMBER, PG
[J]. PHILOSOPHICAL MAGAZINE, 1976, 33 (06): : 935 - 949
[29] TEMPERATURE-DEPENDENCE OF PHOTOCONDUCTIVITY IN A-SI
SPEAR, WE
LOVELAND, RJ
ALSHARBA.A
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1974, 15 (03) : 410 - 422
[30] INVESTIGATION OF AMORPHOUS-SILICON BARRIER AND P-N-JUNCTION
SPEAR, WE
LECOMBER, PG
SNELL, AJ
[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1978, 38 (03): : 303 - 317